MPSA42
MPSA43
w w w. c e n t r a l s e m i . c o m
SILICON
HIGH VOLTAGE
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA42 and
MPSA43 are silicon NPN transistors designed for
high voltage applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
SYMBOL
VCBO
VCEO
MPSA42
300
300
VEBO
IC
MPSA43
200
UNITS
V
200
V
6.0
V
500
mA
625
mW
PD
PD
TJ, Tstg
1.5
W
-65 to +150
°C
Thermal Resistance
JA
200
°C/W
Thermal Resistance
JC
83.3
°C/W
ELECTRICAL
SYMBOL
ICBO
ICBO
CHARACTERISTICS: (TA=25°C)
TEST CONDITIONS
VCB=200V
VCB=160V
MPSA42
MIN
MAX
100
MPSA43
MIN
MAX
-
IEBO
IEBO
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
-
-
-
VEB=6.0V
-
100
VEB=4.0V
-
-
BVCBO
IC=100μA
300
BVCEO
IC=1.0mA
300
BVEBO
IE=100μA
VCE(SAT)
IC=20mA, IB=2.0mA
IC=20mA, IB=2.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VBE(SAT)
hFE
hFE
hFE
fT
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
Cob
VCB=20V, IE=0, f=1.0MHz
UNITS
nA
100
nA
-
-
nA
-
100
nA
-
200
-
V
-
200
-
V
6.0
-
6.0
-
V
-
0.50
-
0.40
V
-
0.90
-
0.90
V
25
-
25
-
40
-
40
-
40
-
50
200
50
-
50
-
MHz
-
3.0
-
4.0
pF
R2 (26-March 2015)
MPSA42
MPSA43
SILICON
HIGH VOLTAGE
NPN TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R2 (26-March 2015)
w w w. c e n t r a l s e m i . c o m
MPSA42
MPSA43
SILICON
HIGH VOLTAGE
NPN TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R2 (26-March 2015)
w w w. c e n t r a l s e m i . c o m
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• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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